Ferroelectric domain architecture and poling of BaTiO3 on Si
نویسندگان
چکیده
منابع مشابه
High ferroelectric polarization in c-oriented BaTiO3 epitaxial thin films on SrTiO3/Si(001)
Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, Bellaterra 08193, Barcelona, Spain Dep. de Fisica, Universitat Autònoma de Barcelona, Campus UAB, Bellaterra 08193, Barcelona, Spain Institut des Nanotechnologies de Lyon (INL), UMR CNRS 5270, Ecole Centrale de Lyon, 36 avenue Guy de Collongues, 69134 Ecully Cedex, France Materials Science and Technology Division, Oak Ridge...
متن کاملElectric field and surface charge effects on ferroelectric domain dynamics in BaTiO3 single crystal
D. Y. He,1 L. J. Qiao,1,* Alex A. Volinsky,1,2 Y. Bai,1 and L. Q. Guo1 1Corrosion and Protection Center, Key Laboratory for Environmental Fracture (MOE), University of Science and Technology Beijing, Beijing 100083, People’s Republic of China 2Department of Mechanical Engineering, University of South Florida, Tampa, Florida 33620, USA (Received 24 December 2010; revised manuscript received 5 Ma...
متن کاملA review of molecular beam epitaxy of ferroelectric BaTiO3 films on Si, Ge and GaAs substrates and their applications
SrTiO3 epitaxial growth by molecular beam epitaxy (MBE) on silicon has opened up the route to the monolithic integration of various complex oxides on the complementary metal-oxide-semiconductor silicon platform. Among functional oxides, ferroelectric perovskite oxides offer promising perspectives to improve or add functionalities on-chip. We review the growth by MBE of the ferroelectric compoun...
متن کاملDislocation-density changes upon poling of polycrystalline BaTiO3
We report evidence for a significant increase of bulk dislocation density upon poling of polycrystalline BaTiO3. The synchrotron high-resolution x-ray-diffraction measurements yield a dislocation density on the order of 10/cm and an associated strain-energy increase of about 20 kJ/m. This implies that the application of an external poling field generates defects in the structure and increases t...
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ژورنال
عنوان ژورنال: Physical Review Materials
سال: 2020
ISSN: 2475-9953
DOI: 10.1103/physrevmaterials.4.034406